QuantTera specializes in a new class of wafer bonded radiation hard transistors and photonic devices. By utilizing our low temperature HetroBond process, we have developed innovative devices for high performance that standard epitaxial growth technologies cannot achieve. HetroBond is a trademark of QuantTera. Dr. Matt Kim has been working on GeSn alloy semiconductor and wafer bonding technology since 2006. GeSn semiconductor is very useful for integration to standard GaAs or Si photonic applications given that GeSn becomes direct gap at 7%-11% Sn content. GaN is an ideal wide bandgap semiconductor that is radiation hard, mechanically robust, has excellent thermal conductivity, and huge breakdown field (greater than 3.3 MV/cm), and a high electron saturation velocity which makes it ideal for high power RF applications. It is the combination of these technologies utilizing optimized materials that will be the enabling key to succeed in a highly competitive and cost conscious technology market. The difficulties of taking highly sophisticated epitaxial materials are cost prohibitive unless a strategy can be developed and our portfolio of innovative cost effective products has achieved this purpose. QuantTera has developed the technology of wafer bonding to wide bandgap semiconductor for their important use in RF Power electronics and Radiation Hard applications.


1) GaN based power efficient amplifiers for cellular and military communications.

QuantTera issued U.S. patents and continuation patents encompass the highly efficient heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) for RF power amplifier transmitters for the global communications market. Our devices are suitable for both high efficiency and high power microelectronics.

2) Fabrication of IR-LASERs and detectors for telecommunications.

QuantTera has developed tunable laser technology that covers the 1550 nm bands. We have three U.S. patents issued on this novel technology. QuantTera has created fully integrated laser systems that include the laser module and control circuitry from design through fabrication. QuantTera continually develops new materials for the active regions of near-IR and mid-IR lasers and detectors.


1) GeSn HBT

2) Wafer Bonded GeSn-GaN HBT

3) GeSn Transistor Laser

4) Widely Tunable NIR InP Fabry Perot Laser (Voltage Controlled)

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